Growth of semiconductor epitaxial layers
Informacje ogólne
Kod przedmiotu: | WTCNXCSD-SEL |
Kod Erasmus / ISCED: | (brak danych) / (brak danych) |
Nazwa przedmiotu: | Growth of semiconductor epitaxial layers |
Jednostka: | Wydział Nowych Technologii i Chemii |
Grupy: | |
Punkty ECTS i inne: |
(brak)
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Język prowadzenia: | (brak danych) |
Forma zajęć liczba godzin/rygor: | (tylko po angielsku) W12/x; L/30+ |
Przedmioty wprowadzające: | (tylko po angielsku) Fundamentals of solid state physics / Preliminary requirements: fundamentals of semiconductors. Crystal growth - MBE/ Preliminary requirements: fundamentals of molecular beam epitaxy. Characterization of semiconductors/ Preliminary requirements: XRD measurements, Hall measurements |
Programy: | (tylko po angielsku) Semester IV; Material Science, Photonic Systems Dedicated to Telecommunication and Detection |
Autor: | (tylko po angielsku) Piotr Martyniuk, DsC |
Bilans ECTS: | (tylko po angielsku) 1. Participation in lectures /12 2. Lectures' self study / 4 3. Participation in laboratories / 30 4. Laboratories' self study / 5 5. Participation in consultations / 4 6. Exam preparation /4 7. Exam /2 Students worktime: 65/ 5 ECTS Lecturer participation: 48/ 4 ECTS Laboratories: 30/ 2.5 ECTS |
Skrócony opis: |
(tylko po angielsku) Fundamental properties of A3B5 compounds used in optoelectronics. A3B5 barrier strucures. Organic materials in optoelectronics. MOCVD (HgCdTe) and MBE (T2SLs InAs/GaSb on GaAs and GaSb) technology. Characterization of the epi-layers and detectors. |
Pełny opis: |
(tylko po angielsku) Lectures: 1. Heterostructures and barrier structures in designing of IR detectors. 2. Growth of A3B5 materials on GaSb substrates. 3. Growth of A3B5 materials on GaAs substrates. 4. Growth of bulk barrier structures on GaAs substraters. 5. p- and n-type doping of A3B5 materials. 6. Characterization of A3B5 materials grown on GaAs substrates. Laboratory: 1. Growth of GaSb epilayers on GaAs. 2. n and p-type doping in A3B5. 3. Growth bulk A3B5 materials on GaAs. 4. Growth bulk barrier structures on GaAs. 5. Hall measurements of the epilayers. 6. XRD characterization of the epilayers. |
Literatura: |
(tylko po angielsku) Marian A. Herman, Helmut Sitter, Molecular Beam Epitaxy Fundamentals and Current Status, ISBN: 978-3-642-80062-7 (Print) 978-3-642-80060-3 |
Efekty uczenia się: |
(tylko po angielsku) D_W01 Advanced knowledge in technological sciences, especially materials science and solid state physics. D_W02 Advanced knowledge regarding newest achievements in new materials and technologies as well as research and measurement techniques. D_W03 Knowledge regarding methodology of scientific research in materials science and related subjects. D_U01 He/she has got skills connected with methodology of research in materials sciences, especially regarding new materials and technologies. D_U05 He/she can describe experimental procedure and report research activity. D_U06 He/she can design and perform material synthesis and characterization. |
Metody i kryteria oceniania: |
(tylko po angielsku) Effect D_W01, D_W02, D_W03 - credits in writing and oral, fulfillment of laboratory classes. Effect D_U01, D_U05, D_U06 - laboratory classes. |
Właścicielem praw autorskich jest Wojskowa Akademia Techniczna.